GAA-FET
Nanowire – Next-Generation Semiconductor Channel Technology
A nanowire is a quasi-one-dimensional nanostructure with a diameter typically in the range of 1–100 nanometers and a much longer length. In the field of semiconductors, nanowires are emerging as a revolutionary channel material and structure, offering superior electrostatic control and scalability for advanced transistors, particularly beyond FinFET technology nodes.
Nanowire-based transistors are expected to play a crucial role in sub-5nm logic technologies, quantum computing, sensing, and photonic applications.
Structure:
A semiconductor nanowire transistor consists of:
- A nanoscale cylindrical or rectangular wire-shaped channel, suspended or encapsulated in an insulating material.
- A gate-all-around (GAA) configuration, where the gate electrode fully surrounds the nanowire.
- Source and Drain contacts formed at both ends of the nanowire.
- High-κ/metal gate stack to provide excellent gate control.
Nanowires may be made from materials like:
- Silicon (Si) for CMOS compatibility
- III-V materials (InGaAs, GaN) for high electron mobility
- Germanium (Ge) for high hole mobility
Working Principle:
The nanowire transistor operates similarly to a MOSFET but benefits from superior electrostatic control due to the gate-all-around structure:
- Applying a gate voltage creates an inversion layer along the nanowire, allowing current to flow between source and drain.
- Due to the 3D gate wrap, the channel is better shielded from short-channel effects such as DIBL (Drain-Induced Barrier Lowering) and leakage currents.
- Nanowire FETs allow multiple stacked channels, increasing drive current and device density.
This resistance change is non-volatile, meaning it is retained even after power is removed.
Advantages of Nanowire Technology:
- Ultimate gate control with GAA structure
- Superior scalability beyond 5nm node
- Lower subthreshold slope and leakage
- Higher drive current compared to FinFETs
- Compatibility with advanced device architectures
- Potential for heterogeneous integration with different materials
Applications of Nanowire Devices:
- Sub-5nm logic technologies (GAA-FET in commercial foundries)
- Quantum computing (e.g., nanowire-based qubits)
- Nanoscale biosensors and chemical sensors
- Photodetectors and solar cells
- NEMS/MEMS devices
Our Nanowire Device Services:
We provide cutting-edge support for Nanowire-based device development, including:
- 3D TCAD Simulation of Nanowire FETs (quantum transport, mobility, tunneling)
- Custom Nanowire Device Design with GAA or stacked configuration
- Advanced layout and patterning techniques (EUV, ALD, spacer-defined patterning)
- Process flow development for selective etching, nanowire release, and wrap-around gates
- Materials support for high-mobility channels (III-Vs, Ge, etc.)